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| inchange semiconductor product specification silicon pnp power transistors tip36/36a/36b/36c description ? with to-3pn package ? complement to type tip35/35a/35b/35c ? dc current gain h fe =25(min)@i c =-1.5a applications ? designed for use in general purpose power amplifier and switching applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit tip36 -40 TIP36A -60 tip36b -80 v cbo collector-base voltage tip36c open emitter -100 v tip36 -40 TIP36A -60 tip36b -80 v ceo collector-emitter voltage tip36c open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -25 a i cm collector current-peak -40 a i b base current -5 a p c collector power dissipation t c =25 ?? 125 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors tip36/36a/36b/36c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit tip36 -40 TIP36A -60 tip36b -80 v ceo(sus) collector-emitter sustaining voltage tip36c i c =-30ma ;i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-15a ;i b =-1.5a -1.8 v v cesat-2 collector-emitter saturation voltage i c =-25a; i b =-5a -4.0 v v be-1 base-emitter on voltage i c =-15a ; v ce =-4v -2.0 v v be-2 base-emitter on voltage i c =-25a ; v ce =-4v -4.0 v tip36/36a v ce =-30v; i b =0 i ceo collector cut-off current tip36b/36c v ce =-60v; i b =0 -1.0 ma tip36 v ce =-40v;v eb =0 TIP36A v ce =-60v;v eb =0 tip36b v ce =-80v;v eb =0 i ces collector cut-off current tip36c v ce =-100v;v eb =0 -0.7 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-1.5a ; v ce =-4v 25 h fe-2 dc current gain i c =-15a ; v ce =-4v 15 75 f t transition frequency i c =-1a ; v ce =-10v 3 mhz inchange semiconductor product specification 3 silicon pnp power transistors tip36/36a/36b/36c package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) inchange semiconductor product specification 4 silicon pnp power transistors tip36/36a/36b/36c |
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